S800 Si/SiGe/Metal/Oxide MBE System

SGC800 molecular beam epitaxy system
UHV cluster tool

The S800 system is based on the smaller S600 design. The larger 800 mm diamter growth chamber is designed for 200 mm substrate size.

The growth chamber has two ports for side mounted electron guns and up to six ports for effusion cells or oxygen sources. The 200 mm high temperature substrate heating stage is fully motorized with automatic substrate loading/unloading mechanism.

 

The CDC200 UHV cluster tool chamber houses a robotic substrate handler which allows reliable and fast substrate transfer between process chambers and entry/exit chambers. The chamber has six positions for process tools/chambers and can handle substrates up to 200 mm in diameter. Larger CDC300 cluster tool is available for 300 mm substrates.

The first S800 system was delivered to Prof. Erich Kasper at the University of Stuttgart, Institute of Semiconductor Engineering.

 

 

 

The DCA SiGe/Si//Metal/Oxide MBE systems are in use in these leading laboratories:
  • Institute for Semiconductor Physics (IHP), Franfurt-Oder, Germany
  • KFA-Julich, Julich, Germany
  • Technical University of Chemnitz, Chemnitz, Germany
  • University of Catania, Catania, Italy
  • University of Hannover, Hannover, Germany
  • University of Stuttgart, Stuttgart, Germany
  • Trinity College, Dublin, Ireland
  • Motorola Research Laboratories (now Freescale), Tempe, Arizona, USA
    • DCA Instruments
    S800 Features

  • Cryopanels designed for silicon epitaxy
  • Side mounted e-guns for easy access and service
  • Uniform substrate heating up to 1100 oC
  • Magnetically coupled
    linear shutters
  • Special e-guns for silicon epitaxy and UHV use
  • Max. 200 mm substrate
    diameter
  • UHV cluster tool for
    wafer transfer
  • Optional manual loading system
  • Oxygen RF ion
    source
  • Water or liquid nitrogen cooled cryopanels


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    2007
    DCA Instruments Oy