S600 Si/SiGe/Metal/Oxide MBE System

The SGC600 MBE was originally developed for the Institute of Semiconductor Physics (IHP) in Frankfurt-Oder, Germany in close collaboration with Prof. Hans Joerg Osten's MBE group.

The growth chamber has four ports for four side mounted electron guns and up to five ports for effusion cells or oxygen sources. A carbon sublimator can be used for SiGeC growth. The high temperature substrate manipulator is designed for uniform heating of 4" silicon substrates.

The growth chamber has several ports reserved for precise flux control equipment. In a standard configuration the electron gun fluxes are controlled using cross beam quadrupole mass spectrometer. Another alternative is to use atomic absorption spectroscopy. The choice of flux control method depends on the materials to be grown.

The system photo left shows the IHP MBE system with XPS and STM chambers connected together with DCA linear buffer chamber system. The buffer line can house various substrate treatment and cleaning facilities.

The SGC600 system is ideal for high-K dielectrics material research and development.

The Center for Materials and Technologies for Information and Communication Science (MATIS) at the University of Catania in Italy has a custom designed 6" version of the SGC600 MBE system.