R600 Research MBE System

The R600 MBE is a the next step up from the R450 MBE system. The growth chamber is optimized for III-V, II-VI, GaN and ZnO epitaxy.

The inclined growth chamber gives good access to the source area and provides high filling ratios for the effusion cells. In the standard version the groth chamber is provided with ten 6" CF ports for large capacity effusion cells. The alternative versions of the growth chamber have either twelve 4.5" source ports or up to 14 source ports with combination of 4.5" CF and 2.75" CF ports. Each source position has a separate port for a linear, magnetically coupled shutter.

The chamber has a large area main cryopanel surrounding the top part of the chamber and a separate source area cryopanel mounted on the source flange.

The R600 system can be provided with a single wafer load lock or a cassette load lock. The cassette load lock allows unlimited expansion or the system using DCA modular UHV buffer chamber system.

Large capacity single and dual filament effusion cells and valved crackers for Arsenic and Phosphorus are available for this system.

Many MBE systems suffer from large flux transients when a group III shutter is opened resulting in corresponding change in the growth rate. These changes in instantaneous growth rate occur when the cell cools or heats because of changes in its thermal environment, particularly when a shutter is first opened to initiate growth. The R600 growth chamber geometry has been optimized to remove this propblem using a correct shutter-source geometry. The figure on the left shows Ga flux BEP with opening/closing the Ga shutter. The flux transient is less than 1% using standard DCA group III Knudsen cells.

Prof. Felix Gwo's group at the Department of Physics, National Tsing-Hua University, Hsinchu, Taiwan uses DCA R600 MBE system for GaN and InN growth.