DCA Instruments

  • Compact size
  • Easy access to sources
  • Eight or ten source ports
  • Magnetically coupled linear shutters
  • UHV buffer chamber
  • Max. 3" substrate size
  • Multiwafer loading option
  • Optional phosphorus pumping unit
  • Wide selection of effusion cells and valved crackers


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    R450 Research MBE System

    R450 molecular beam epitaxy system
    The R450 MBE is a compact R&D system suitable for III-V, II-VI, GaN and ZnO epitaxy.

    The inclined growth chamber gives good access to the source area and provides high filling ratios for the effusion cells. The system left shows the R450 system with single wafer load lock and a small ion pumped buffer chamber.

    The growth chamber is designed for easy servicing with each source shutter mounted on a separate port.

    The R450 growth chamber can be provided with either single part or two part liquid nitrogen cryo panel. The system on the left shows the growth chamber with two part cryo panel consisting of a main cryo panel surrounding the substrate area and a second panel mounted on the source flange.

    The R450 MBE system shown on the left was delivered to Prof. Fritz Henneberger's group at the Humboldt University of Berlin, Department of Physics. This system is used for the growth of ZnO, ZnMgO as well as ZnMgO/ZnO quantum well structures.

    Large capacity single and dual filament effusion cells and valved crackers for Arsenic and Phosphorus are available for this system.

    R450 MBE system with two part cryopanel