Molecular Beam Epitaxy

Molecular Beam Epitaxy (MBE) is an Ultra High Vacuum (UHV)-based technique for producing high quality epitaxial structures with monolayer (ML) control. In MBE, ultra-pure elements such as gallium and arsenic are heated in separate effusion cells until they each slowly begin to evaporate. The evaporated elements then condense on the wafer, where they may react with each other. In the example of gallium and arsenic, single-crystal gallium arsenide is formed.

The DCA R450 MBE is a compact R&D MBE system ideally suited for III-V, II-VI or GaN epitaxy. The system is available with two different substrate loading designs. The single wafer load lock version (shown in the picture) with buffer chamber has the smallest foot print. Alternatively the system can be provided with a cassette load lock and linear buffer and preparation chambers.

The maximum substrate size is 3". The growth chamber is available with eight or ten source ports.

The DCA R600 MBE has a growth chamber which is optimized for large capacity effusion cells and up to 4" substrate size. The system can be configured for III-V, II-VI or GaN epitaxy.

The inclined growth chamber is available with ten 6" CF (NW100CF) or twelve 4.5" CF (NW63CF) source ports. Standard DCA single wafer or cassette loading systems are available with the R600 MBE.

The P600 MBE system is specifically designed for precise production of high-quality and complex compound semiconductors. It can simultaneously process three 2" wafers or one 4" wafer.

With the extensive cryopaneling and a special phosphorus pumping unit the system is especially suitable for GaAs/InP epitaxy.

The SGC600 MBE system is the most advanced MBE system for SiGeC and Si/metal/oxides. The growth chamber can provided with up to four high capacity electron guns and six effusion cells or other sources.

The SGC600 is available with 3" or 4" maximum substrate size.

The SGC800 MBE system is a fully automated MBE system for up to 200 mm wafer size. The growth chamber is provided with two high capacity electron guns and up to six effusion cells or other sources.

The SGC800 MBE system is optimized for 200 mm substrate size.

The system features a cluster tool type UHV robotic wafer handler with up to six chamber connection ports. The entry/exit chambers have the capacity for loading up to 10 wafers simultaneously.

The SGC 1000 MBE system is a fully automated MBE system for up to 300 mm wafer size. The growth chamber can provided with up to four high capacity electron guns and six effusion cells or other sources.

The SGC1000 is available either with 200 mm or 300 mm maximum substrate size.

The system features a cluster tool type UHV robotic wafer handler with up to seven chamber connection ports. The entry/exit chambers have the capacity for loading up to 10 wafers simultaneously.

The M600 metal MBE system is an R&D MBE system for the growth of metal and metal/oxide epitaxial films.

The M600 MBE system can be equipped with either 1.5", 2", 3" or 4" substrate manipulator.

The growth chamber has ports for two single or multi-pocket e-guns and up to eight effusion cells.

A small volume single wafer load lock or alternatively a multi-wafer cassette load lock is provided for substrate loading.

Physical Vapor Deposition (PVD)

Physical Vapor Deposition (PVD) is a process by which a thin film of material is deposited on a substrate according to the following sequence of steps: 1) the material to be deposited is converted into vapor by physical means; 2) the vapor is transported across a region of low pressure from its source to the substrate; and 3) the vapor undergoes condensation on the substrate to form the thin film. The DCA PVD techniques include magnetron sputtering, electron beam deposition and pulsed laser deposition, all under UHV conditions.

The PLD500 pulsed laser deposition system is a load locked deposition system with unique chamber geometry. The design allows on-axis or off-axis deposition in one chamber. The system also features a high temperature oxygen resistant heater stage with XY-scanning and continuous rotation. Full computer control with LabView based deposition control programme is available as an option.

The target holder has 6 x 2" maximum target capacity. The maximum substrate size is 3".

Our expertise includes sequential sputtering, co-sputtering and facing target sputtering (FTS) techniques. We also build UHV systems for combinatorial film deposition with special computer controlled shutters and in-situ mask change equipment.

If a standard sputtering system does not fulfil your requirements, we can provide a solution.

The E600 cluster tool sputtering system is a versatile platform for GMR device production, ion beam deposition or ion beam etching. The system can be provided with up to five process chambers and a single wafer or cassette load lock system. The tool can be configured for 3" to 8" wafer size.

The E300 system is a compact electron beam evaporator with very small floor print. The chamber is designed to be used with single or multi-pocket e-guns. The system includes load lock, sample manipulator, electron beam equipment and film thickness control. Depending on the application, different manipulator designs can be used with rotation, sample tilt and heating. The deposition chamber is UHV compatible.

MBE and Deposition Components

DCA offers a wide range of effusion cells, valved crackers and other sources for MBE. DCA substrate manipulators are known for their robust design and long life time. An oxygen compatible substrate heater is available for oxide epitaxy.

The PVD components product range includes PLD target holders, substrate manipulators and heaters, laser viewports and other components for system upgrading or self builders.

The DCA phosphorus valved cracker is a unique, modular 3-zone cracker with removable red phosphorus tank. The red phosphorus tank is separated from the white phosphorus zone with a UHV valve. During growth there is no need to heat the red phosphorus charge. This improves the white zone temperature stability and response time.

As the control valve is also UHV tight,the white phosphorous zone is never exposed to atmosphere.

The VCP Series high capacity arsenic valved cracker cells have been designed for heavy duty use in R&D and production MBE. The crackers have been extensively field tested under 24 h/day production runs.

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The DCA effusion (Knudsen) cells are noted for their superior performance in R&D and production MBE. Apart from the 2000 ^oC high temperature cell, all DCA effusion cells have thick foil tantalum filament. The filament runs cooler than typical wire filaments due to larger surface area. The lifetime of the filament is considerably longer than corresponding thin foil designs.

DCA has wide range of substrate manipulators and sample heaters for MBE and other thin film deposition applications. These manipulators feature either PBN/PG/PBN or SiC heater elements. We also provide retrofit substrate manipulators for other vendors MBE systems.

The DCA PLD target holder is available as a component for system builders or for retrofitting existing systems. The holder allows continuous rotation during deposition as well as quick and easy indexing of the targets. Both movements are motorized.

The target holder is available in several sizes:

• 6 x 2" target
• 6 x 1" target
• 4 x 2" target
• 4 x 1" target
• 3 x 2" target
• 3 x 1" target

Many deposition processes require precise pressure regulation either using upstream or downstream regulation. Downstream regulation is realized using an adjustable conductance control or throttle valve between the pump and the chamber. These throttle valves have been available in HV versions only.

The new DCA UHV throttle valve is fully bakeable and has no dynamic or static O-ring seals. The valve can be provided with a servo motor and a pressure controller allowing fully automatic UHV compatible downstream pressure regulation.

At DCA we pay attention to detail. User friendliness of our vacuum systems is very important for us. One example of this is our chamber light source. This 25 W quartz halogen light source is a standard accessory in all our deposition systems. Due to popular demand we now supply this to other manufacturers' vacuum systems. The quartz lamp can be attached to any 2.75" CF (NW38CF) port with a viewport.