P600 Production MBE System

P600 MBE system for laser production

The P600 MBE is the most advanced MBE system for III-V or GaN epitaxy. The P600 MBE was originally designed for VCSEL production in close collaboration with the scientists from Applied Optoelectronics Inc. (AOI), in Sugar Land, Texas. Applied Optoelectronics develops and manufactures advanced semiconductor diode lasers. The company's lasers are used in the wireless, cable television (CATV), and tele-communications industries, as well as for spectroscopy systems. AOI has two dual chamber P600 MBE systems installed for their laser production.

The P600 growth chamber is designed for use with large capacity effusion cells and valved cracker cells. The system comes with a linear load lock/UHV buffer chamber system which allows unlimited system expansion with additional process chambers.

The growth chamber is designed for easy servicing with each source shutter mounted on a separate port. The unique vertical shutters keep the source materials clean from falling deposits and also completely eliminate flux over shooting.

The source flange can be easily removed from the system using a movable trolley. A differentially pumped main flange with dual Kalrez seal provides fast turnaround for chamber cleaning.

DCA has installed several P600 systems worldwide including a system at the Gwangju Institute of Science and Technology in Gwangju, South Korea.

P600 molecular beam epitaxy system
DCA Instruments

  • Vertical growth chamber
  • Easily removed source flange
  • Ten or twelve source ports
  • Vertical magnetically coupled linear shutters
  • UHV buffer chamber
  • 3x2" or single 4" substrate capacity
  • Multiwafer load lock
  • Optional phosphorus pumping unit
  • Wide selection of effusion cells and valved crackers


  • Click hereP600 MBE system brochure in PDF formatfor PDF file download


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